A733 pnp epitaxial silicon transistor elite enterprises (h.k.) co., ltd. part no.: A733 flat 2505, 25/f., nanyang plaza, 57 hung to road, kwun tong, h.k. tel: (852) 2723-3122 fax: (852) 2723-3990 email: info@elite-ent.com.hk page: 1 / 1 low frequency amplifier collector-emitter voltage: v ceo =-50v collector dissipation: p c (max)=250mw absolute maximum ratings (ta=25 o c) characteristic symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma collector dissipation p c 250 mw junction temperature t j 150 o c storage temperature t stg -55~+150 o c electrical characteristics (ta=25 o c) characteristic symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = -5 a, i e =0 -60 v collector-emitter breakdown voltage bv ceo i c = -1ma, i b =0 -50 v emitter-base breakdown voltage bv ebo i e = -50 a, i c =0 -5 v collector cut-off current i cbo v cb = -60v, i e =0 0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 01 a dc current gain h fe v ce = -6v, i c = -1ma 90 200 600 collector-emitter saturation voltage v ce(sat) i c = -100ma, i b = -10ma -0.18 -0.3 v transition frequency f t v ce = -6v, i c = -10ma f= 30mhz 50 180 mhz h fe classification classification r q p k h fe 90-180 135-270 200-400 300-600 free datasheet http://
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